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Zipp: 663-8105
8-5, Nakajima-cho, Nishinomiya-city, Hyogo, Japan



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SIIQ

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SiCアライアンス

SiC及び関連ワイドギャップ半導体研究会

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New factory opened exclusive
for new material wafer processing

2017/01~

~New materials:SiC,Sapphire,LT,etc~


●Increased processing capacity to cope with mass-production.

●Separated from silicon wafer processing, wafer incoming~
delivery to be one-pass process.

●Cost advantage by the process reduction.

●Mass production started in March, 2017.


■ 
New factory image
New factory

※New factory(D building) overview
SiC 3F Cleaning/Outgoing Inspection
 
3F Cleaning/Outgoing Inspection
SiC 2F Polishing room
 
2F Polishing room
SiC 1F Grinding
 
1F Grinding

Strength of new factory

 

SiC High quality achievement of "Flatness", "Surface roughness", "Work-affected layer" by use of high-rigidity grinder
⇒Reduction of process cost.
     
SiC   Reduction of sleigh after back-grind thinning.
⇒Capable of one-pass processing of grinding + polishing.
     
SiC   High level cleanness by introduction of exclusive cleaning equipment for Siapphire
(Reduction of contamination + particle)
     
SiC   Expect to introduce knife-edge prevention process for Sapphire, which is already under operation for silicon.

Thinning process of patterned SiC wafer

 

Example of patterned SiC wafer processing
Result of thickness variations of grinded wafer (SiC 6-inch wafer)

Unit:um TV5grinded wafer
※TV5: 1um≧ after grinding

 

Result of roughness comparison after grinding (SiC 6-inch wafer)

 

Result of roughness comparison after grinding Thickness variations/surface roughness improved by use of High rigidity grinder.

※Surface roughness improved with conventional grinder.

事業案内

Ultra-Thin SiC wafer processing

Sample data of SiC wafers processed with wafer support.
4” SiC wafer used to achieve ultra-thin & ultra-flat.
※Result of thickness variations of grinded wafe (SiC 4-inch wafer)

Backggrinding
4 inch SiC
TV5 (um)
Range
A
B
C
D
E
22.88
22.4
22.03
22.75
22.31
0.37
TV5
4” SiC wafer used to achieve ultra-thin & ultra-flat.
事業案内
■ SiC wafer grinding and polishing services

事業案内

Rokko is one of the few companies that provides an integrated SiC wafer processing service (Wafer grinding, polishing and RCA cleaning) through its soley develped technologies.

Rokko has developed techniques to utilize its existing semiconductor tools and equipment for SiC operations. In comparison of the conventional equipment available in the SiC industry, Rokko’s process has its advantages in throughput, wafer warpage, roughness, and flexibility of wafer size.


SiC
SiC
● Total reflection x-ray fluorescence analysis tool TREX610
TREX610
Measurable elements: 12 elements (S, Cl, K, Ca, Ti, Cr,Mn,Fe,Co,Ni,Cu,Zn)
● Candela CS20 Wafer surface inspection machine
candela CS20
Wafer Size: 3, 4, 5, and 6 Inch
Measurable thickness: 300-1400um
 Automatic scrub cleaning process

New equipment:
After polishing, residues contain alkaline substances results in becoming polishing marks or sources of particle. Removing such residues before coated by native oxide films is one of the key techniques in polishing.
In our conventional process, wafers are cleaned piece by piece through operator’s manual scrubbing. Now, Rokko introduced the automated cleaning equipment to eliminate human errors and deviation of quality to achieve the uniform stable quality.

■Wafer Size:4, 5, 6, 8 inch
■Thickness:~ 100μm
■Patterned・ MEMS and SOI Wafer
Glass supported wafers also can be processed.
● Automatic scrub cleaning machine
Automatic scrub cleaning machine
High cleaning performance.
● Automatic scrub cleaning machine
Automatic scrub cleaning machine
Wafer Size: 4, 5, 6, 8 Inch
Sapphire and SiC wafers can be processed

  SiC wafer process

Comparison of SiC wafer process


  Conventional process Rokko's process
  Diamond lapping Polishing, CMP Grinding Polishing, CMP
Running cost High
(Metal wheels + Diamonds)
Moderate
(Pads + Slurry)
Moderate
(Diamond wheels)
Moderate
(Pads + slurry)
Required level of process technology High Moderate High High
Cost of equipment High Moderate High High
Throughput Very low Low Moderate Moderate
Remarks Wax mounting
Difficulties in lapping table adjustment
Higher number of process is required.
Wax mounting
Difficulties in lapping table adjustment
Vacuum chucking system.
Automatic grinding machine for sapphire and .SiC
Waxless polishing
 SiC wafer grinding process-Roughness
150mm SiC wafer grinding surface roughness
SiC wafer grinding process-Roughness SiC wafer grinding process-Roughness

Evaluation Rough grinding Final grinding
Roughness Ra 12.4-14.6nm 2-5nm
Warp Visual(Scale) 0.5-0.8mm 0.2-0.4mm
※Surface roughness:Non-contact type surface profile measuring equipment :Zygo
 SiC wafer CMP surface AFM measuring result 
(6 inch)
6 inch SiC surface polishing surface AFM measurement result 
(3 points of surface)
AFM measuring result 
Center
Ra:0.711Å
Middle
Ra:0.576Å
Edge
Ra:0.632Å
150mm SiC wafer Si surface post CMP surface roughness  Ra < 0.1nm
  SiC wafer post cleaning particle measurement result
150mm SiC wafer post cleaning particle measurement result
Pre cleaningcleaning paticle measurement result
SiC
Scrub cleaningcleaning paticle measurement result
SiC
RCA cleaningcleaning paticle measurement result
Pre cleaning   Scrb cleaning   RCA cleaning
1.Scrub cleaning is effective for emoving large size particle
2Particles and dirt are removed after RCA cleaning
3.10 pieces≧0.3um
 Metal contamination after SiC wafer cleaning
150mm SiC wafer metal contamination after wafer cleaning
TXRF tester
TXRF tester
TXRF tester
Result of measuring(by TRFX) SiC wafer cleaning process

<5X1010atoms/cm2
  TXRF tester
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