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Ultra-thinning and planarization of 4- and 6-inch LT/LN junction substrates and oxide wafers

With the introduction of new equipment, ultra-thinning and ultra-flattening processing has become possible!
We have introduced terrace processing, ultra-high precision grinding machines, CMP, and trimming machines.
We achieved thinning and ultra-flattening at the nm level.

Ultra-thinning and planarization of 4.6-inch LT/LN junction substrate wafers
新工場の強み  

Terrace processing ⇒ Grinding ⇒ CMP ⇒ Trimming



Terrace processing
Grinding
CMP(flattening)
Trimming process
LT・LN接合基板
LT・LN接合基板
LT・LN接合基板
LT・LN接合基板

Oxide film ⇒ Ultra-flattening processing
新工場の強み  

CMP ⇒ Trimming
Surface flatness and roughness data before and after processing

酸化膜
Before processing
酸化膜 酸化膜
After processing
酸化膜 酸化膜
新工場の強み  

Even with 4.6-inch LT/LN bonded substrate wafers, the same level of ultra-thinning and planarization as described below is possible.

   
AVE, Before processing 489nm 462nm
After processing 292nm 301nm
MAX Before processing 610nm 617nm
After processing 298nm 317nm
MIN Before processing 445nm 380nm
After processing 282nm 281nm
TTV Before processing 165nm 237nm
After processing 16nm 36nm
3σ Before processing 100nm 165nm
After processing 7nm 21nm
Sa Before processing 0.25nm 0.25nm
After processing 0.12nm 0.12nm

  LT・LN接合基板  
   
   
 
 

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