We also offer paid contract testing services
for inspections only. Please feel free to contact us.
■ Inspection correspondence
table by material
○-Mark = Inspection available Each material * Each inspection
details
Material
Face
Particles
Contamination
Flatness
Thickness
ICP-MS
TXRF
Zygo
TTV
SBIR
SFQR
BOW
Warp
SORI
contact type
non-contact type
Resistance
P/N
MEM
SICA
Silicon
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N-dope SiC
Si-face
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C-face
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Semi-insulating
SiC
Si-face
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C-face
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SiC Epi wafer
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Polycrystalline SiC
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LiTaO 3
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LiNbO3
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GaN
Ga-face
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N-face
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Sapphire
C-face
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R-face
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Ga2O3
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AlN
Al-face
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N-face
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Quartz
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GaN on Si
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GaN on Sap
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GaN on SiC
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SOI
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Oxide film
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Glass
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● Mirelis electron microscope 【MEM】
※8-inch SiC measurement available
※Contract inspection services available.
Used as a surface (Si surface) latent flaw inspection machine
to check for processing damage and defects.
● SiC wafer defect inspection and review system 【SICA88】
※8-inch SiC measurement available
※Contract inspection services available.
Used for scratch inspection of surfaces (Si side and C side),
and for checking pits, defects, etc.
● Wafer flatness measurement
and analysis system
【Tropel】
※Contract inspection services available.
Used to check flatness before and after processing.
TTV, NTV, SORI, BOW, WARP, etc.
● Surface roughness measuring
instrument 【Zygo】
※Contract inspection services available.
Used for checking surface roughness after machining (non-contact
measurement).
Roughness measurement after grinding and CMP (Chemical Modulation).
● Total Internal Reflection X-ray
Fluorescence Analyzer 【TXRF】
※Contract inspection services available.
Metal contamination and full-surface sweep measurement possible《[S
Cl K Ca Ti Cr Mn Fe Co Ni Cu Zn》
● Inductively coupled plasma
mass spectrometer
【ICP-MS】
※Contract inspection services available.
Metal contamination and various metals can be measured
● Particle counter
We inspect the particles in the polished wafer.
● Flatness measuring device
We will measure the BOW, WARP, and TTV of the polished wafer.
● Automatic spectral interference
wafer thickness meter
Thickness can be measured for the silicon layer only of the
taped wafer・SOI・supported wafer・resin-material/tape supported
wafer(in case 2 silicon wafers are attached, one side silicon
layer can be measured).
This equipment unloads wafers from cassettes and measures
thickness at a designated coordinate of wafer. The measurement
is done by a contactless capacitance sensor.
Differential interference contrast
microscope
This tool allows to observe roughness on a wafer surface.
Visual inspection
Wafers are inspected under a halogen lamp in a dark room.
